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Supercritical fluid immersion deposition: a new process for selective deposition of metal films on silicon substratesYE, Xiang R; WAI, Chien M; YUEHE LIN et al.Surface & coatings technology. 2005, Vol 190, Num 1, pp 25-31, issn 0257-8972, 7 p.Article

THEORY AND MEASUREMENTS OF PHOTORESPONSE FOR THIN FILM PD₂SI AND PTSI INFRARED SCHOTTKY-BARRIER DETECTORS WITH OPTICAL CAVITYELABD H; KOSONOCKY WF.1982; RCA REVIEW; ISSN 0033-6831; USA; DA. 1982; VOL. 43; NO 4; PP. 569-589; BIBL. 11 REF.Article

SILICIDE FORMATION IN PD-A-SI:H SCHOTTKY BARRIERSTHOMPSON MJ; JOHNSON NM; NEMANICH RJ et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 274-276; BIBL. 21 REF.Article

THE DIERBIUM DIPALLADIUM SILICIDE, ER_D2PD_D2SI, STRUCTURE, A PERIODIC INTERGROWTH OF CECU_D2 AND MNP STRUCTURE-TYPE SEGMENTSKLEPP K; HOVESTREYDT E; PARTHE E et al.1983; ACTA CRYSTALLOGRAPHICA. SECTION C. CRYSTAL STRUCTURE COMMUNICATIONS; ISSN 51277X; DNK; DA. 1983; VOL. 39; NO 6; PP. 662-664; BIBL. 10 REF.Article

PALLADIUM-SILICIDE SCHOTTKY-BARRIER IR-CCD FOR SWIR APPLICATIONS AT INTERMEDIATE TEMPERATURESELABO H; VILLANI T; KOSONOCKY W et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 89-90; BIBL. 4 REF.Article

SCHOTTKY BARRIER HEIGHT MEASUREMENT BY ELECTRON-BEAM INDUCED VOLTAGEHUANG HCW; ALIOTTA CF; HO PS et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 54-56; BIBL. 10 REF.Article

A transmission electron microscope study of the effect of cyclohexane adsorption on the crystallization of Pd₈₀Si₂₀ metallic glassKOWBEL, W; BROWER, W. E. JR.Journal of catalysis (Print). 1986, Vol 101, Num 2, pp 262-267, issn 0021-9517Article

Reflection electron microscopy observation of formation process of palladium silicide islands on silicon (111) surfaceTAKEGUCHI, Masaki; TANAKA, Miyoko; YASUDA, Hidehiro et al.Scripta materialia. 2001, Vol 44, Num 8-9, pp 2363-2367, issn 1359-6462Conference Paper

Effects of phosphorus implantation and post annealing on palladium silicide Schottky barrier diode characteristicsKIKUCHI, A.Japanese journal of applied physics. 1984, Vol 23, Num 10, pp 1345-1347, issn 0021-4922, 1Article

The effect of Ti:W Barrier metal on characteristics of palladium-silicide Schottky Barrier diodesDROBNY, V. F.Journal of electronic materials. 1985, Vol 14, Num 3, pp 283-296, issn 0361-5235Article

Reduction of contact resistivity by As redistribution during Pd₂Si formationOHDOMARI, I; HORI, M; YONEDA, K et al.Journal of applied physics. 1983, Vol 54, Num 8, pp 4679-4682, issn 0021-8979Article

Variation of Pendellösung fringes in elastically deformed silicon single crystalsWHITE, G. E; HAYDN CHEN.Materials letters (General ed.). 1984, Vol 2, Num 4B, pp 347-350, issn 0167-577XArticle

THE VISCOSITY OF MOLTEN FE₄₀NI₄₀P₁₄B₁₆ AND PD₈SI₁₈STEINBERG J; TYAGI S; LORD AE JR et al.1981; ACTA METALL; ISSN 0001-6160; USA; DA. 1981; VOL. 29; NO 7; PP. 1309-1319; ABS. FRE/GER; BIBL. 47 REF.Article

BARRIER HEIGHT CONTROL OF PD₂ SI/SI SCHOTTKY DIODES USING DIFFUSION FROM DOPED PDSTUDER B.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 11; PP. 1181-1184; BIBL. 11 REF.Article

ELECTRICAL CHARACTERISTICS OF LASER-CONTACTED DIODESWITTMER M; LUETHY W; STUDER S et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 2; PP. 141-145; BIBL. 22 REF.Article

PD-SILICIDE REACTIONS INDUCED BY A MILLISECOND LASER PULSE = PD-SILIZID-REAKTIONEN INDUZIERT DURCH EINEN MILLISEKUNDEN-LASERIMPULS = FORMATION DE SILICIURES DE PALLADIUM INDUITE PAR UNE IMPULSION LASER DE QUELQUES MILLISECONDESGEILER HD; THRUM F; GOETZ G et al.1982; PHYS. STATUS SOLIDI (A), APPL. RES.; DDR; DA. 1982-04; VOL. 70; NO 2; PP. K159-K162; BIBL. 5 REF.Article

MATERIAL REACTIONS IN AL/PD₂SI/SI JUNCTIONS. I: PHASE STABILITYKOSTER U; HO PS; LEWIS JE et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 11; PART. 1; PP. 7436-7444; BIBL. 11 REF.Article

STOICHIOMETRY AND STRUCTURAL DISORDER EFFECTS ON THE ELECTRONIC STRUCTURE OF NI AND PD SILICIDESCHABAL YJ; ROWE JE; POATE JM et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 6; PP. 2748-2758; BIBL. 42 REF.Article

A STUDY OF TI AS A DIFFUSION BARRIER BETWEEN PT SI OR PD₂SI AND ALSALOMONSON G; HOLM KE; FINSTAD TG et al.1981; PHYS. SCR.; ISSN 0031-8949; SWE; DA. 1981; VOL. 24; NO 2; PP. 401-404; BIBL. 16 REF.Conference Paper

PD-SILICIDE REACTIONS INDUCED BY A MILLISECOND LASER PULSEGEILER HD; THRUM F; GOETZ G et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 70; NO 2; PP. K159-K162; BIBL. 3 REF.Article

STRUCTURAL PROPERTIES OF THE PD-SI INTERFACE: AN INVESTIGATION BY REFLECTION HIGH ENERGY ELECTRON DIFFRACTION = PROPRIETES STRUCTURALES DE L'INTERFACE PD-SI: UNE ETUDE PAR DIFFRACTION EN REFLEXION D'ELECTRONS DE HAUTE ENERGIEOUSTRY A; BERTY J; CAUMONT M et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 4; PP. 295-300; BIBL. 16 REF.Article

LOW-TEMPERATURE REDISTRIBUTION OF AS IN SI DURING PD₂SI FORMATIONOHDOMARI I; TU KN; SUGURO K et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 1015-1017; BIBL. 8 REF.Article

FORMATION OF SHALLOW SILICIDE CONTACTS OF HIGH SCHOTTKY BARRIER ON SI: ALLOYING PD AND PT WITH W VS ALLOYING PD AND PT WITH SIEIZENBERG M; TU KN.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1577-1585; BIBL. 12 REF.Article

REDISTRIBUTION OF AS DURING PD₂SI FORMATION: ION CHANNELING MEASUREMENTSWITTMER M; TING CY; OHDOMARI TI et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 10; PP. 6781-6787; BIBL. 19 REF.Article